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ANHUI CRYSTRO CRYSTAL MATERIALS Co., Ltd.
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High Light Emission Efficiencyht Yield Gd3Al2Ga3O12 Ce GAGG Ce Scintilation Crystals

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High Light Emission Efficiencyht Yield Gd3Al2Ga3O12 Ce GAGG Ce Scintilation Crystals

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Brand Name : Crystro

Model Number : CR210528-01

Certification : ISO9001,RoHS,Reach

Place of Origin : China

MOQ : 1pc

Price : USD 20-200/pc

Payment Terms : T/T, Western Union, MoneyGram, Paypal

Supply Ability : 5000pcs per month

Delivery Time : 4-5 weeks

Packaging Details : Transparent clean box

Product : High Light Emission Efficiencyht yield Gd3Al2Ga3O12:Ce (GAGG:Ce) Crystal Wafer

Chemical Formular : Gd3Al2Ga3O12

Density : 6.63g/cm3

Size Tolerance : ±0.05mm

Surface Quality : 10/5

Clear Aperture : >90%

Charmfer : <0.2x45°

Application : PET,SPECT,CT..

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High Light Emission Efficiencyht yield Gd3Al2Ga3O12:Ce (GAGG:Ce) Crystal Wafer

GAGG(Ce) (Ce:GAGG, Gd3Al2Ga3O12) is new scintillator for single photon emission computed tomography(SPECT), gamma-ray and compton electron detection. Cerium doped GAGG have many properties that make it suitable for gamma spectroscopy and medical imaging applications. A high photon yield and emission peak around 520 nm makes the material well suited to be readout by Silicon Photo-multiplier detectors.

Crystro's GAGG wafer is grown by Czochralski method.Max diameter reach 3inch,it's now the biggest size in this filed,we can custom size and specs ,rougness<0.5nm.Magneto-optical single crystals like GGG,SGGG,TGG,TSAG are our main products.
Anhui Crystro participate in the kinds exhibitions every year: Laser World of Photonics Munich, Shanghai, Photonics West in San Francisco, CIOE in Shenzhen, etc.
CRYSTRO offers GAGG crystals with:

High density
High light yield
Fast decay time
Chemically inert
High sensitivity
High energy resolution

Main Advantages:

  • Good absorbers with good stopping powers - density 6.63 g/cm³
  • Robust with good mechanically characteristics

Main Applications:

  • Medical Imaging - PET, PEM, SPECT and CT
  • Specialist applications in high energy, nuclear, space and medical physics

Main Properties:

Chemical Formula GdAlGaO₁₂
Atomic Number (Effective) 54.4
Growth Method Czochralski
Density 6.63g/cm3
Mohs Hardness 8
Melting Point 1850℃
Thermal Expansion Coeff. TBA x 10‾⁶




Specifications:

Chamfer<0.2×45°
Orientation Tolerance< 0.5°
Thickness/Diameter Tolerance±0.05 mm
Clear Aperture>90%
Wavefront Distortiondia 70mm
Surface Quality10/5 (Scratch/Dig)
Parallel10″
Perpendicular

5′


High Light Emission Efficiencyht Yield Gd3Al2Ga3O12 Ce GAGG Ce Scintilation Crystals



















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